Method of forming an alloyed drain field effect transistor and d

Details Method of forming an alloyed drain field effect transistor and d Method of forming an alloyed drain field effect transistor and d

1995-07-05

1996-12-31

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 31, 437 39, 437143, 437188, 437189, 437197, 437247, H01L 21265

Patent

active

055894089

ABSTRACT:
A method of forming an alloyed drain field effect transistor (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electrode (19) is isolated from the first major surface by a dielectric layer (18). A first current conducting electrode (23) contacts a portion of the first major surface (12). A second current conducting electrode (24) contacts another portion of the monocrystalline semiconductor substrate (11) and is capable of injecting minority carriers into the monocrystalline semiconductor substrate (11). In one embodiment, the second current conducting electrode contacts a second major surface (13) of the monocrystalline semiconductor substrate (11).

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patent: 5273917 (1993-12-01), Sakurai
patent: 5397716 (1995-03-01), Anderson
patent: 5451544 (1995-09-01), Gould
Sakurai et al., Power MOSFETs Having Schottky Barrier Drain Contact, Int'l Symposium on Power Semiconductor Devices & Ics, Tokyo 1990, pp. 126-130.
Sin et al., The SINFET: A New High Conductance, High Switching Speed MOS-Gated Transistor, Electronic Letters, Nov. 1985, p. 1124.
Sin et al., Analysis and Characterization of the Hybrid Schottky Injection Field Effect Transistor, IEDM 86 -9.4, pp. 222-225.

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