Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1998-07-06
2000-07-04
Booth, Richard
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
H01L 2176
Patent
active
06083806&
ABSTRACT:
An alignment mark (51) is formed on the surface (64) of a silicon carbide substrate (50). The alignment mark (51) is used to reflect a light signal (72) to determine the proper position for the silicon carbide substrate (50). The materials that are used to form the alignment mark (51) can be used to form an alignment mark on any transparent or semi-transparent substrate and will maintain physical integrity through very high temperature processing steps.
REFERENCES:
patent: 5042945 (1991-08-01), Shibata et al.
patent: 5144747 (1992-09-01), Eichelberger
patent: 5188876 (1993-02-01), Hensel et al.
patent: 5270222 (1993-12-01), Moslehi
patent: 5506421 (1996-04-01), Palmour
patent: 5553110 (1996-09-01), Sentoku et al.
patent: 5554561 (1996-09-01), Plumton
patent: 5610085 (1997-03-01), Yuan et al.
patent: 5624860 (1997-04-01), Plumton et al.
patent: 5681762 (1997-10-01), Baliga
patent: 5712189 (1998-01-01), Plumton et al.
patent: 5917205 (1999-06-01), Mitsui et al.
patent: 5972793 (1999-10-01), Tseng
patent: 6015750 (2000-01-01), Bruce et al.
Mancini David P.
Moore Karen E.
Resnick Douglas J.
Tompkins Harland G.
Booth Richard
Collopy Daniel R.
Kennedy Jennifer M.
Koch William E.
Motorola Inc.
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