Method of forming an air gap intermetal layer dielectric...

Details Method of forming an air gap intermetal layer dielectric... Method of forming an air gap intermetal layer dielectric...

2005-06-21

2005-06-21

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S422000, C438S622000, C257S619000, C257S411000, C257S758000

Reexamination Certificate

active

06908829

ABSTRACT:
A method of forming an air gap intermetal layer dielectric (ILD) to reduce capacitive coupling between electrical conductors in proximity. The method entails forming first and second electrical conductors over a substrate, wherein the electrical conductors are laterally spaced apart by a gap. Then, forming a gap bridging dielectric layer that extends over the first electrical conductor, the gap, and the second electrical conductor. In order to form a bridge from one electrical conductor to the other electrical conductor, the gap bridging dielectric materials should have poor gap filling characteristics. This can be attained by selecting and/or modifying a dielectric material to have a sufficiently high molecular weight and/or surface tension characteristic such that the material does not substantially sink into the gap. An example of such a material is a spin-on-polymer with a surfactant and/or other additives.

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