Method of forming amorphous silicon film

Details Method of forming amorphous silicon film Method of forming amorphous silicon film

1984-02-27

1985-07-30

Weisstuch, Aaron

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Process of making radiation-sensitive product

427 39, 427 451, 427 86, 430133, G03G 5082

Patent

active

045321990

ABSTRACT:
A method of forming an amorphous silicon film includes the steps of bringing a gas which is pre-excited by electron cyclotron resonance generated by an alternating electric field and a magnetic field into contact with a raw material gas containing silicone atoms in a reaction chamber in which a substrate is placed, so that the raw material gas is converted to radicals, and forming an amorphous silicon film on a surface of the substrate by the reaction of radicals therewith. Microwaves can be used as the alternating electric field.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4438188 (1984-03-01), Shimatani et al.
patent: 4439463 (1982-02-01), Miller

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