Method of forming amorphous silicon

Details Method of forming amorphous silicon Method of forming amorphous silicon

1982-03-29

1984-05-01

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 85, 427 86, 427 88, H01L 4500

Patent

active

044461682

ABSTRACT:
A method of forming, through plasma chemical vapor deposition technique, an amorphous silicon film, one side thereof intended for ohmic contact with specifically an aluminum electrode in a semiconductor device, comprising the steps of: introducing a starting gas containing at least a silicon-containing gas into an evacuated container; and subjecting said gas to plasma chemical vapor deposition through a glow discharge at a power density of 0.3 W/cm.sup.2 or greater. The particular a-Si region thus obtained provides a good ohmic contact with an aluminum electrode which is low in price and in melting point but high in reliability. In case an active a-Si region is desired, it is only necessary to lower the power density to a level below 0.3 W/cm.sup.2.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson

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