Method of forming aluminum nitride films by ion-assisted evapora

Details Method of forming aluminum nitride films by ion-assisted evapora Method of forming aluminum nitride films by ion-assisted evapora

1990-01-18

1991-03-05

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 42, 4272481, 4271261, B05D 306

Patent

active

049976737

ABSTRACT:
Method of forming aluminum nitride film on a substrate by subjecting the substrate to aluminum evaporation and nitrogen ion irradiation in a vacuum. Defects in the aluminum nitride film due to ion irradiation is minimized by irradiating the substrate with low energy nitrogen ions, i.e., nitrogen ions having an energy level no higher than 1 KeV. The particle ratio (composition ratio of Al/N) used in forming the aluminum nitride film is between 0.5 to 2.0.

REFERENCES:
patent: 4634600 (1987-01-01), Shimizu et al.
patent: 4759948 (1988-07-01), Hashimoto et al.
Targove et al, "Preparation of Aluminum Nitride and Oxynitride Thin Films by Ion-Assisted Deposition", MRS (Anaheim, CA), Apr. 21-23, 1987, pp. 311-316.

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