Method of forming alloyed metal contacts on rough saw-damaged si

Details Method of forming alloyed metal contacts on rough saw-damaged si Method of forming alloyed metal contacts on rough saw-damaged si

1986-10-17

1988-01-12

Godici, Nicholas P.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

22826311, B23K 3102

Patent

active

047185937

ABSTRACT:
The present invention relates to an improved method for the permanent bonding of a metal to a rough cut and unmodified semiconductor material, which comprises (a) contacting the surface of (i) the semiconductor material in an inert atmosphere at elevated temperature where the semiconductor surface is rough cut usually with a diamond saw and is not subsequently treated further, with (ii) a metal electrode wherein the surface of the metal electrode comprises (iii) a solder itself comprising between about 10-90% by weight of palladium and about 10-90% by weight of silver, and (b) the soldered semiconductor metal joint is cooled in an inert atmosphere to ambient temperature. Preferably, a silicon surface and tungsten electrode are joined at between about 800.degree. and 1300.degree. C. using a solder comprising about 24.8 to 37.2 mg of palladium and 43.2 to 64.8 mg of silver per square centimeter to be covered of the silicon surface. In the process, the rough surface of the silicon does not need to be specially treated, thus resulting in an increase in efficiency and a decrease in cost.

REFERENCES:
patent: 3510157 (1970-05-01), Rubin
patent: 3941916 (1976-03-01), Morse
patent: 4110783 (1978-08-01), Onodera et al.
T. S. Kuan, et al., "Effect of Luricant Environments on Saw Damage in Si Wafers", Journal Electrochemical Society: Solid State Science and Technology, vol. 127, No. 6, pp. 1387-1394, (Jun. 1980).

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