Method of forming airbridged metallization for integrated circui

Details Method of forming airbridged metallization for integrated circui Method of forming airbridged metallization for integrated circui

1996-07-10

1997-11-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257776, H01L 2348

Patent

active

056867433

ABSTRACT:
A method for forming an airbridge for interconnecting metal contacts on an integrated circuit. The airbridge is formed by initially patterning a support photoresist between the metal contacts to be interconnected, over the metal contact to be crossed. The pattern support photoresist is flood exposed with UV light and subsequently baked at a relatively high temperature to cause the support photoresist to flow into a generally spherical shape. The airbridged metal lines are patterned over the spherically shaped support photoresist. Excess metallization is lifted off the support photoresist and the photoresist used to pattern the airbridge is removed, forming an airbridge with curvature along both its width and length.

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