Method of forming air gap dielectric spaces between semiconducto

Details Method of forming air gap dielectric spaces between semiconducto Method of forming air gap dielectric spaces between semiconducto

1994-05-27

1995-04-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, 437 65, 437228, 437194, 437231, H01L 2144

Patent

active

054078601

ABSTRACT:
This is a device and method of forming air gaps in between metal leads comprising. The method comprising: forming the metal leads 51-53 on an insulating layer 50; depositing a nonwetting material layer 56 on the metal leads 51-53 and the insulating layer 50; anisotropically etching the nonwetting material 56 to remove the nonwetting material 56 from open areas and leaving the nonwetting material on side walls of the metal leads 51-53; and depositing a dielectric layer 60 on top of the metal leads 51-53, and the insulating layer 50, whereby the air gaps 58 are produced in between the metal leads 51-53 below the dielectric layer 60. The method may include anisotropically etching at an angle, not vertical, whereby the etching allows removal of the nonwetting material from exterior side walls of the metal leads. The method may also include leaving the nonwetting material layer in between the metal leads. The deposition of the dielectric layer may utilize plasma deposition and spin on techniques.

REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5001079 (1991-03-01), Van Laarhoven et al.
patent: 5017509 (1991-05-01), Tuckerman
patent: 5192715 (1993-03-01), Sliwa, Jr. et al.
patent: 5310700 (1994-05-01), Lien et al.

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