Method of forming a wiring layer of a semiconductor device using

Details Method of forming a wiring layer of a semiconductor device using Method of forming a wiring layer of a semiconductor device using

1996-09-10

1998-02-10

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437194, 437195, H01L 21283

Patent

active

057168695

ABSTRACT:
A method of manufacturing a semiconductor device having the steps of: forming an insulating layer on a substrate having a semiconductor surface; forming a contact hole in and through the insulating layer; forming a conductive film on the inner surface of the contact hole and on the surface of the insulating film; forming a vapor deposited titanium film on the inner wall of a vacuum chamber; placing the substrate formed with the conductive film in the vacuum chamber; and heating the substrate and reflowing the conductive film. A good wiring layer can be formed by suppressing generation of a void during a reflow process.

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