Method of forming a wiring layer of a semiconductor device

Details Method of forming a wiring layer of a semiconductor device Method of forming a wiring layer of a semiconductor device

1991-04-19

1993-03-02

Quach, T. N.

Fishing, trapping, and vermin destroying

437187, 437228, 437229, 437962, 148DIG106, 430318, H01L 2131

Patent

active

051908948

ABSTRACT:
In a method of manufacturing a semiconductor device, an Al wiring layer is formed on an interlevel insulator using a positive resist. The interlevel insulator has a recess portion formed on its surface corresponding to a position between two electrodes under the interlevel insulator. The Al wiring layer extends along the recess portion in the longitudinal direction and is formed to bridge the recess portion in a direction perpendicular to the logitudinal direction. The method includes the steps of arranging an Al layer on a region of the interlevel insulator including the recess portion, arranging the resist of the Al layer, exposing the resist to a light beam using a mask member having a light-shielding portion corresponding to the wiring layer, patterning the photoresist, and etching the Al layer using the patterned resist as a mask to form the wiring layer. The light-shielding portion of the mask member is sized such that both sides of the Al wiring layer are located at locations where a surface of the interlevel insulator is perpendicular to the radiation direction of the light beam.

REFERENCES:
patent: 4557797 (1985-12-01), Fuller et al.
patent: 5057462 (1991-10-01), Eisenberg et al.
patent: 5126289 (1992-06-01), Ziger
patent: 5135891 (1992-08-01), Ikeno et al.

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