Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-07-11
2011-11-15
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S105000, C438S795000, C257SE21041, C257SE21085, C257SE21324
Reexamination Certificate
active
08058085
ABSTRACT:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.
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Doering Patrick J.
Dromeshauser William W.
Genis Alfred R.
Linares Bryant
Linares Robert C.
Apollo Diamond, Inc
Pert Evan
Schwegman Lundberg & Woessner, P.A.
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