Method of forming a wafer backside interconnecting wire

Details Method of forming a wafer backside interconnecting wire Method of forming a wafer backside interconnecting wire

2006-03-07

2006-03-07

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S110000

Reexamination Certificate

active

07008821

ABSTRACT:
A method of forming a wafer backside interconnecting wire includes forming a mask layer on the back surface, the mask layer including at least an opening corresponding to the bonding pad, performing a first etching process from the back surface to remove the wafer unprotected by the mask layer to form a recess, removing the mask layer, and forming an interconnecting wire on the back surface.

REFERENCES:
patent: 4381341 (1983-04-01), Przybysz et al.
patent: 2003/0160293 (2003-08-01), Iadanza
patent: 2004/0121563 (2004-06-01), Farnworth et al.
patent: 2005/0067680 (2005-03-01), Boon et al.

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