Method of forming a vertical memory device with a...

Details Method of forming a vertical memory device with a... Method of forming a vertical memory device with a...

2007-04-17

2007-04-17

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

10448675

ABSTRACT:
A method of forming a vertical memory device with a rectangular trench. First, a substrate covered by a photoresist layer is provided. Next, the photoresist layer is defined by a mask to form a rectangular opening, wherein the mask has two rectangular transparent patterns arranged with a predetermined interval. Next, the substrate is etched using the defined photoresist layer as a mask to form a single rectangular trench and the photoresist layer is then removed. Finally, a trench capacitor and a vertical transistor are successively formed in the rectangular trench to finish the vertical memory device.

REFERENCES:
patent: 5437947 (1995-08-01), Hur et al.
patent: 5876878 (1999-03-01), Pierrat et al.
patent: 6444524 (2002-09-01), Chung et al.
patent: 6582260 (2003-06-01), Nemoto et al.

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