Method of forming a varactor with an increased linear tuning...

Details Method of forming a varactor with an increased linear tuning... Method of forming a varactor with an increased linear tuning...

2006-06-27

2006-06-27

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

Reexamination Certificate

active

07067384

ABSTRACT:
The linear tuning range of a semiconductor varactor is substantially increased by forming a lightly-doped drain region of a first conductivity type in a semiconductor material of a second conductivity type between a heavily-doped diffusion of the second conductivity type and a lower-plate region of the semiconductor material.

REFERENCES:
patent: 5338966 (1994-08-01), Kasahara
patent: 6225674 (2001-05-01), Lim et al.
patent: 6320474 (2001-11-01), Kamiya et al.
patent: 6472282 (2002-10-01), Yu
patent: 2002/0074589 (2002-06-01), Benaissa et al.

Affiliated with

Also associated with

Rating

Method of forming a varactor with an increased linear tuning... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a varactor with an increased linear tuning..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a varactor with an increased linear tuning... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3709894