Method of forming a varactor

Details Method of forming a varactor Method of forming a varactor

2005-09-27

2005-09-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S238000, C438S473000

Reexamination Certificate

active

06949440

ABSTRACT:
A method of forming a varactor includes forming an ion well of a first conductivity type on a substrate and a plurality of isolation structures on the ion well. The isolation structures define at least an active area on the ion well. Following that, ions of the first conductivity type are implanted into the ion well to form a doping region within the active area. A doping layer of a second conductivity type is then formed on the substrate to cover portions of the doping region. A salicide layer is formed on the doping region and the doping layer.

REFERENCES:
patent: 5965912 (1999-10-01), Stolfa et al.
patent: 6608362 (2003-08-01), Kai et al.
patent: 6720637 (2004-04-01), Voldman
patent: 6825546 (2004-11-01), Walker et al.

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