Method of forming a trench structure in a semiconductor device

Details Method of forming a trench structure in a semiconductor device Method of forming a trench structure in a semiconductor device

1997-01-03

1998-07-07

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438700, 438705, H01L 2176

Patent

active

057768170

ABSTRACT:
The invention relates to a method of forming trenches having different depths in a substrate of an IC using different refractory metal layers. The depths of the trenches can be changed by controlling the thicknesses of the refractory metal layers. The profiles of the trenches can be also changed by controlling operating parameters, such as temperature, reaction time, and so on. Thus, trenches having different depths are generated.

REFERENCES:
patent: 5668043 (1997-09-01), Park

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