Method of forming a trench semiconductor device and...

Details Method of forming a trench semiconductor device and... Method of forming a trench semiconductor device and...

2005-10-24

2008-12-09

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S432000, C438S446000, C257SE29260

Reexamination Certificate

active

07462550

ABSTRACT:
In one embodiment, a trench semiconductor device is formed to have an oxide of a first thickness along the sidewalls of the trench, and to have a greater thickness along at least a portion of a bottom of the trench.

REFERENCES:
patent: 4967245 (1990-10-01), Cogan et al.
patent: 6861296 (2005-03-01), Hurst et al.
patent: 2003/0176043 (2003-09-01), Kim et al.
“Trench Power MOSFET Having Low Gate Charge”, publication No. IPCOM000021950D, on Feb. 17, 2004, ip.com.

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