Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1997-06-27
1998-10-06
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438424, 438428, 148DIG50, H01L 2176
Patent
active
058175687
ABSTRACT:
A method, using multi-trench formation techniques, to define the respective depths of trenches having different widths. The method includes forming a buffer oxide layer and a polishing stop layer, in sequence, above a semiconductor substrate. Then, the buffer oxide layer, the polishing stop layer and the semiconductor substrate are defined to form at least one narrow trench. Thereafter, the buffer oxide layer, the polishing stop layer and the semiconductor substrate are again defined to form at least one wide trench whose depth is less than that of the narrow trench. Alternatively, the wide trench may be etch-defined first, followed by the narrow trench. However, in both cases the depth of the wide trench will be less than that of the narrow trench. Subsequently, an oxide layer is formed, which fills the narrow and wide trenches. Next, a portion of the oxide layer and a portion of the polishing stop layer are removed to form a planarized surface. Finally, the polishing stop layer and the buffer oxide layer are removed.
REFERENCES:
patent: 5340755 (1994-08-01), Zwicknagl et al.
patent: 5397731 (1995-03-01), Takemura
patent: 5536675 (1996-07-01), Bohr
patent: 5646063 (1997-07-01), Mehta et al.
patent: 5702977 (1997-12-01), Jang et al.
Dang Trung
Winbond Electronics Corp.
LandOfFree
Method of forming a trench isolation region does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a trench isolation region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a trench isolation region will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-76647