Method of forming a trench isolation for semiconductor device wi

Details Method of forming a trench isolation for semiconductor device wi Method of forming a trench isolation for semiconductor device wi

1999-12-20

2000-11-07

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438426, 148DIG50, H01L 2176

Patent

active

061436232

ABSTRACT:
A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.

REFERENCES:
patent: 5234861 (1993-08-01), Roisen et al.
patent: 6017800 (2000-01-01), Sayama et al.

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