Method of forming a trench isolation

Details Method of forming a trench isolation Method of forming a trench isolation

2005-03-29

2005-03-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S428000, C438S436000, C438S437000, C438S438000

Reexamination Certificate

active

06872631

ABSTRACT:
A method of forming a trench isolation in a substrate includes the steps of forming a trench groove in a substrate, forming a first electrically insulating layer which fills the trench groove and extends over an upper surface of the substrate, where the first electrically insulating layer has a first surface migration, and an upper surface of the first electrically insulating layer has a first hollow positioned over the trench groove, and forming a second electrically insulating layer over the first electrically insulating layer. The second electrically insulating layer fills the first hollow and an upper surface of the second electrically insulating layer has a second hollow positioned over the trench groove. The second electrically insulating layer has a second surface migration smaller than the first surface migration.

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