Method of forming a trench isolation

Details Method of forming a trench isolation Method of forming a trench isolation

2005-01-04

2005-01-04

Zarneke, David A. (Department: 2827)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S428000, C438S435000, C438S436000, C438S438000

Reexamination Certificate

active

06838356

ABSTRACT:
The present invention provides a method of forming a trench isolation in a substrate, which comprises the steps of: forming a trench groove in a substrate; forming a first electrically insulating layer which fills the trench groove and extends over an upper surface of the substrate, wherein the first electrically insulating layer has a first surface migration, and an upper surface of the first electrically insulating layer has a first hollow positioned over the trench groove; and forming a second electrically insulating layer over the first electrically insulating layer, wherein the second electrically insulating layer fills the first hollow, and an upper surface of the second electrically insulating layer has a second hollow positioned over the trench groove, and the second electrically insulating layer has a second surface migration smaller than the first surface migration.

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patent: A 2000-31266 (2000-01-01), None

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