Method of forming a trench capacitor on a semiconductor substrat

Details Method of forming a trench capacitor on a semiconductor substrat Method of forming a trench capacitor on a semiconductor substrat

1989-04-24

1990-03-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437203, 437229, 437249, 357 236, H01L 21265, H01L 2710

Patent

active

049065904

ABSTRACT:
The disclosed method of forming a capacitor on a semiconductor substrate includes the steps of filling a trench in the semiconductor substrate with a photoresist, a step of exposing the photoresist in situ to a standing wave of light intensity which is created by interference between incident light directed to the bottom of the trench and reflected light from the bottom of the trench, developing and exposed photoresist in situ to leave periodic photoresist regions along the side wall of the trench in the direction of its depth, and etching the side wall using the residual periodic photoresist as a mask to create periodic hollows along the side wall of the trench.

REFERENCES:
patent: 4397075 (1983-08-01), Fatula, Jr. et al.
patent: 4702795 (1987-10-01), Douglas
Nicky C. C. Ju, "Advanced Cell Structures for Dynamic Rams", IEEE Circuits and Devices; vol. 5, No. 1, Jan. 1989, pp. 27-36.
F. H. Dill et al., "Modeling Projection Printing of Positive Photoresists", IEEE Transations of Electron Devices, vol. ED-22, No. 7, Jul. 1975, pp. 456-464.

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