Method of forming a trench capacitor

Details Method of forming a trench capacitor Method of forming a trench capacitor

2011-03-29

2011-03-29

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257SE21019, C257SE21648

Reexamination Certificate

active

07915133

ABSTRACT:
A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.

REFERENCES:
patent: 7452769 (2008-11-01), Park
patent: 2007/0059648 (2007-03-01), Baik

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