Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
2007-05-04
2010-12-28
Zameke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Forming schottky junction
C257SE21425
Reexamination Certificate
active
07858505
ABSTRACT:
A gate electrode is formed overlying a substrate. A first angled metal implant is performed at a first angle into the substrate followed by performing a second angled metal implant at a second angle. The first angled metal implant and the second angled metal implant form a first current electrode and a second current electrode. Each of the first current electrode and the second current electrode has at least two regions of differing metal composition. A metal layer is deposited overlying the gate electrode, the first current electrode and the second current electrode. The metal layer is annealed to form two Schottky junctions in each of the first current electrode and the second current electrode. The two Schottky junctions have differing barrier levels.
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PCT/US2008/059739 International Search Report mailed Jul. 30, 2008.
Anya Igwe U
Freescale Semiconductor Inc.
Vo Kim-Marie
Zameke David A.
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