Method of forming a transistor having an offset channel section

Details Method of forming a transistor having an offset channel section Method of forming a transistor having an offset channel section

1993-07-22

1994-12-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437 56, 437913, 148DIG150, H01L 21265

Patent

active

053745728

ABSTRACT:
The present invention includes a transistor having a channel region with a first and second section, wherein the sections have lengths that generally perpendicular to one another. The prevent invention also includes the transistor in an SRAM cell and processes for forming the transistor and the SRAM cell. In the embodiments that are described, the first section has a length that is generally vertical and the second section has a length that is generally extends in a lateral direction. The first section may be an undoped or lightly doped portion of a silicon plug. The plug may be formed including an etching or polishing step.

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