Method of forming a titanium disilicide

Details Method of forming a titanium disilicide Method of forming a titanium disilicide

1983-05-06

1985-10-08

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

427 88, 427 91, 427 93, 357 67, 357 71, 148DIG147, H01L 21285, H01L 2946

Patent

active

045451168

ABSTRACT:
A method of forming a metallic silicide on silicon or polysilicon in which a masking layer such as silicon dioxide is formed on a silicon slice and patterned to expose selected areas of the slice surface. The slice is then sputter etched followed by in situ deposition of a metal layer. The slice is heated to convert the portion of the metal layer in contact with the silicon and/or polysilicon to a metal silicide, then the non-converted metal is removed by a selective etchant. According to another embodiment of the invention a titanium layer is deposited and reacted in an ambient including nitrogen to prevent the out-diffusion of silicon through the TiSi.sub.2 and titanium layers.

REFERENCES:
patent: 3855612 (1974-12-01), Rosvold
patent: 4056642 (1977-11-01), Saxena et al.
patent: 4458410 (1984-07-01), Sugaki et al.
Kircher, C. J. et al. "Interconnection Method for Integrated Circuits" in IBM-TDB, 13(2), Jul. 1970, p. 436.
Sinha, A. K. "Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten" in J. Electrochem. Soc.: Solid-State Science and Tech., 120(12), pp. 1767-1771, 12-1973.
Murarka, S. P. et al. "Refractory Silicides of Titanium . . . Interconnects" in IEEE Trans. on Electron Devices, vol. ED-27, No. 8., pp. 1409-1417. Aug. 1980.

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