Method of forming a thin semiconductor film

Details Method of forming a thin semiconductor film Method of forming a thin semiconductor film

1985-11-25

1987-09-15

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG61, 437973, H01L 2120, H01L 21263

Patent

active

046937595

ABSTRACT:
A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

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patent: 4584028 (1986-04-01), Pankove et al.
patent: 4588447 (1986-05-01), Golecki
Pankove et al., Phys. Rev. Letts., 51 (1983) 2224.
Lau et al., Appl. Phys. Letts., 34 (1979) 76.

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