Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-03-21
2006-03-21
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S095000, C117S103000
Reexamination Certificate
active
07014708
ABSTRACT:
An amorphous silicon pattern is formed first. A first region, a second region, at least one first pointed region adjacent to the second region and having a second height, at least one fourth region between the first region and each first pointed region are included in the amorphous silicon pattern. Each fourth region has a fourth height smaller than the second height. A laser crystallization process is performed to form a first single crystal silicon grain in each fourth region.
REFERENCES:
patent: 6265765 (2001-07-01), DiStefano et al.
patent: 6534789 (2003-03-01), Ishida
patent: 6709905 (2004-03-01), Kusumoto et al.
Hiteshew Felisa
Toppoly Optoelectronics Corp.
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