Method of forming a thin film transistor

Details Method of forming a thin film transistor Method of forming a thin film transistor

1981-10-01

1983-09-20

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, H01L 21363

Patent

active

044047312

ABSTRACT:
In the formation of a thin film device, integrity of the semiconductor-insulator and semiconductor-conductor interfaces is preserved by depositing layers of insulator, semiconductor, and conductor in successive sequence under continuous vacuum. In a preferred embodiment, the method minimizes contamination exposure of the critical interfaces between semiconductor and gate insulator and semiconductor and source-drain contacts of a thin film transistor.

REFERENCES:
patent: 3442647 (1969-05-01), Klasens
patent: 3481031 (1969-12-01), Klasens
patent: 3669661 (1972-06-01), Page et al.
patent: 3872359 (1975-03-01), Feuersanger
patent: 3914127 (1975-10-01), Buss et al.
patent: 4040073 (1977-02-01), Luo
patent: 4132586 (1979-01-01), Schaible
patent: 4145459 (1979-03-01), Goel
patent: 4332075 (1982-06-01), Ota et al.
patent: 4343081 (1982-08-01), Morin et al.
"Effect of Ion Implantation on CdSe Thin Film Transistors", Shepherd et al. J. Vac. Sci. Technol., vol. 18, No. 3,-Apr. 1981-pp. 899-902.
"Effect of Thermal Annealing on Thin Film Transistors Processed by Photoengraving", Shepherd et al., J. Vac. Sci. Technol., vol. 17, No. 1,-Jan./Feb. 1980, pp. 485-488.

Affiliated with

Also associated with

Rating

Method of forming a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-582499