Method of forming a thin film on surface of semiconductor substr

Details Method of forming a thin film on surface of semiconductor substr Method of forming a thin film on surface of semiconductor substr

1992-09-22

1995-04-18

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

47225, 47235, H01L 21465

Patent

active

054078679

ABSTRACT:
A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.

REFERENCES:
patent: 4025410 (1977-05-01), Stewart
patent: 4183780 (1980-01-01), McKenna
patent: 4351714 (1982-09-01), Kuriyama
patent: 4590091 (1986-05-01), Rogers, Jr. et al.
patent: 4597826 (1986-07-01), Majima et al.
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4678536 (1987-07-01), Murayama et al.
patent: 4689112 (1987-08-01), Bersin
patent: 4716852 (1988-01-01), Tsujii et al.
patent: 4724159 (1988-02-01), Yamazaki
patent: 4808553 (1989-02-01), Yamazaki
patent: 4871416 (1989-10-01), Fukuda
patent: 4902671 (1990-02-01), Koinuma
Kinsoron et al., "Crystallization of Amorphous Silicon Films During Low Pressure Chemical Vapor Deposition," Appl. Phys. Lett., vol. 42, No. 9, pp. 835-837, May 1, 1983.
Sugino et al., "Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals," Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 207-210.

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