Method of forming a thin film of copper

Details Method of forming a thin film of copper Method of forming a thin film of copper

1996-12-23

1998-10-06

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Metal coating

4272557, 427576, 427528, 427531, C23C 1618

Patent

active

058173676

ABSTRACT:
A method of forming a thin film of copper on a substrate includes a first step of conducting a chemical vapor deposition (CVD) process using a metal organic (MO) source while applying a first bias voltage to the surface of the substrate and a second step of conducting a chemical vapor deposition process using a metal organic source while applying a second bias voltage to the substrate, wherein the second bias voltage is opposite in polarity to the first bias voltage. The process may include a third step of conducting a chemical vapor deposition process using a metal organic source while applying a third bias voltage to the substrate, where the third bias voltage has the same polarity as the first bias voltage.

REFERENCES:
patent: 5096737 (1992-03-01), Baum et al.
patent: 5098516 (1992-03-01), Norman et al.
patent: 5221416 (1993-06-01), Kishi et al.
patent: 5358743 (1994-10-01), Hampden-Smith et al.
patent: 5395642 (1995-03-01), Hamerich et al.
patent: 5441766 (1995-08-01), Choi et al.
patent: 5534314 (1996-07-01), Wadley et al.

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