Method of forming a thin film capacitor

Details Method of forming a thin film capacitor Method of forming a thin film capacitor

1976-02-09

1977-01-11

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29 2542, 29570, 317258, C23C 1500, H01G 700

Patent

active

040025454

ABSTRACT:
A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electrically conductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment, said non-tantalum film being disposed intermediate said substrate and said tantalum film. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within the oxygen-inert gas containing vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from said oxygen-inert gas containing environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

REFERENCES:
patent: 3257305 (1966-06-01), Varga
patent: 3969197 (1976-07-01), Tolar et al.
Maissel et al, "Handbook of Thin Film Technology," McGraw Hill, 1970, pp. 19-30.
P. Lloyd, "Thin-Film Capacitors Using Tantalum Oxide Dielectrics Prepared by Reactive Sputtering", Solid State Electronics, July 1961, pp. 74-75.

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