Method of forming a thin film capacitor

Details Method of forming a thin film capacitor Method of forming a thin film capacitor

1976-02-09

1977-07-26

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29 2542, 29570, 361322, C23C 1500, H01G 410

Patent

active

040381676

ABSTRACT:
A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within an oxygen-nitrogen-inert gas containing vacuum environment. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within said vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from the oxygen-nitrogen-inert gas vacuum environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

REFERENCES:
patent: 3257305 (1966-06-01), Varga
patent: 3969197 (1976-07-01), Tolar et al.
P. Lloyd, "Thin-Film Capacitors Using Tantalum Oxide Dielectrics Prepared by Reactive Sputtering", Solid-State Electronics, July 1961, pp. 74-75.
L. Maissel et al., "Handbook of Thin-Film Technology", McGraw-Hill (1970), pp. 19-28.

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