Coating apparatus – Gas or vapor deposition – With treating means
Patent
1989-06-12
1991-02-12
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118728, C23C 1650
Patent
active
049915428
DESCRIPTION:
BRIEF SUMMARY
<TECHNICAL FIELD>
This invention relates to a method of forming a thin film on a substrate by plasma CVD (chemical vapor deposition) and an apparatus for forming a thin film.
<BACKGROUND ART>
A conventional plasma generator for forming a thin film on a substrate by plasma is disclosed in the Japanese Patent Application No. 60-1279578 (the U.S. patent application Ser. No. 692,145). The major surface of the substrates which are processed on the CVD generator, has electrically conductive portions such that the generator produces substantially uniform plasma. Two opposed electrodes are provided on either one of the major surfaces. A first radio frequency source and a second radio frequency source are electrically connected to the first and second electrodes, respectively. Hereinafter, the radio frequencies are called as high frequencies in this description. The first high frequency source is out of phase from the second high frequency source.
However, with this conventional CVD generator, a solid and fine thin-film which exhibits high corrosion-resistive and abrasion-resistive properties can not yet easily have been formed on the substrate.
<DISCLOSURE OF THE INVENTION>
The object of this invention is to provide a method of forming a solid and fine thin-film having high corrosion-resistive and abrasion-resisitive properties on a substrate by plasma CVD and an apparatus for forming such a thin film.
According to this invention, there is provided a method of forming a thin film by plasma CVD, comprising the steps of:
disposing an object to be processed between feed-gas supplying electrodes arranged facing each other at a predetermined spacing in a vacuum reaction chamber;
supplying a predetermined high frequency electric power to the object to be processed while feed gas is being fed from the feed-gas supplying electrodes to the object to be processed and the feed-gas supplying electrodes are being grounded; and
forming a thin film on the object by plasma produced from the feed gas by the high frequency electric power.
This invention also provides a method of forming a thin film by plasma CVD, comprising the steps of:
disposing an object to be processed between a pair of current-supplying electrodes provided in an opposed relation to each other at a predetermined interval defined between feed-gas supplying electrodes arranged facing to each other at a predetermined region in a vacuum reaction chamber;
supplying a high frequency electric power to the current-supplying electrodes while feed gas is being fed from the feed-gas supplying electrodes to the object to be processed and the gas-feeding electrodes are being grounded; and
forming a thin film on the object by plasma produced from the feed gas by the high frequency electric power.
This invention further provides an apparatus for forming a thin film by plasma CVD, comprising:
feed-gas supplying electrodes disposed facing each other at a predetermined spacing in a vacuum reaction chamber;
feed-gas supplying means connected to said feed-gas supplying electrodes;
supporting means for supporting an object to be processed in a predetermined position between the feed-gas supplying means; and
high frequency electric power supplying means for supplying a predetermined high frequency electric power to the object to be processed while the feed-gas supplying means is being grounded.
The invention still further provides an apparatus for forming a thin film by plasma CVD, comprising:
feed-gas supplying electrodes disposed facing to each other at a predetermined spacing in a vacuum reaction chamber;
feed-gas supplying means connected to the feed-gas supplying electrodes;
supporting means for supporting an object to be processed in a predetermined position between the feed-gas supplying electrodes;
high frequency electric power supplying means for supplying a predetermined high frequency electric power to the object to be processed while the feed-gas supplying electrodes are being grounded;
a fit-engagement disc member having the substantially same t
REFERENCES:
patent: 4317844 (1982-03-01), Carlson
patent: 4625678 (1986-12-01), Shioya
patent: 4668365 (1987-05-01), Foster
Ishida Yoshinori
Kohmura Yukio
Nishimoto Takuya
Bueker Richard
The Furukawa Electric Co. Ltd.
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