Method of forming a thin film by chemical vapor deposition

Details Method of forming a thin film by chemical vapor deposition Method of forming a thin film by chemical vapor deposition

1987-07-17

1989-01-24

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427255, 4272551, 4272552, 4272555, 427404, 4274197, C23C 1608, C23C 1630

Patent

active

048001058

ABSTRACT:
A method of a chemical vapor deposition wherein a first reactive gas containing a metal element and a second reactive gas containing metal element are fed into a reaction chamber in which at least one substrate is disposed under reduced pressure and said substrate is irradiated by a light beam, so that the growth rate of a thin film containing the metal element which to be formed on the surface of the substrate can be increased with the consumption of the reactive gas containing the metal element which is less than that of the conventional methods. The flows of the reactive gases can be maintained in a laminar flow state with good controllability in the entire area of the vicinity of the substrate.

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patent: 4668530 (1987-05-01), Reif et al.
White et al., "Preparation of Metal-Dielectric Mixtures for Microminiaturized Circuity", IBM Tech. Disclosure Bulletin, vol. 5, No. 3, Aug. 1962.

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