Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-01-27
1997-01-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257765, H01L 2348, H01L 2352, H01L 2940
Patent
active
055942806
ABSTRACT:
In an electronic device, an interconnect utilizes a flat substrate and a layer bonded to the substrate. The layer may have a through hole formed therein or be formed from parallel spaced layers. An aluminum or aluminum alloy film having single crystallinity is deposited within the through hole or void step created between parallel spaced layers.
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Levy, et al.
Kobayashi Tsukasa
Sekiguchi Atsushi
Takagi Shinji
Anelva Corporation
Clark S. V.
Crane Sara W.
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