Method of forming a thin film

Details Method of forming a thin film Method of forming a thin film

2005-03-15

2005-03-15

Chen, Bret (Department: 1762)

Coating processes

Electrical product produced

Metallic compound coating

C427S255310, C427S255350, C427S255360, C427S255700

Reexamination Certificate

active

06866882

ABSTRACT:
The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl acetate solution is controlled to a predetermined flow rate by a massflow controller, to evaporate the Pb(DPM)2dissolved together with the butyl acetate by the evaporator. Helium gas is added to these at a flow rate of 250 sccm, and the mixed gas is transported to a shower head. With this operation, source gases are supplied to a wafer in the reactor, while the partial pressure of each source gas is set low.

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