Method of forming a thin copper film by low temperture CVD

Details Method of forming a thin copper film by low temperture CVD Method of forming a thin copper film by low temperture CVD

1990-10-11

1992-02-25

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427250, 427252, 427253, 4272551, C23C 1606, C23C 1608, C23C 1648

Patent

active

050912097

ABSTRACT:
A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

REFERENCES:
patent: 4842891 (1989-06-01), Miyazaki et al.
patent: 4873119 (1989-10-01), Akhtar et al.
patent: 4948623 (1990-08-01), Beach et al.
patent: 4960072 (1990-10-01), Ohta et al.

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