Method of forming a thick polysilicon layer

Details Method of forming a thick polysilicon layer Method of forming a thick polysilicon layer

1998-08-28

2000-10-10

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

42725527, 42725529, 4272557, 427 99, C23C 1624

Patent

active

061299502

ABSTRACT:
An apparatus and a method of forming a thick polysilicon layer are provided. An additional pipeline is introduced into a chamber that is used for depositing polysilicon layers. A thin silicon dioxide film is formed using oxygen after forming a first doped polysilicon layer with a constant thickness. Then a second doped polysilicon layer with a constant thickness is deposited on the thin silicon dioxide layer. The steps described above are repeated until a desired thickness is attained.

REFERENCES:
patent: 4833096 (1989-05-01), Huang et al.
patent: 5396456 (1995-03-01), Liu et al.

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