Method of forming a Ta2O5 comprising layer

Details Method of forming a Ta2O5 comprising layer Method of forming a Ta2O5 comprising layer

2005-03-08

2005-03-08

Meeks, Timothy (Department: 1762)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S092000, C427S255310, C427S576000

Reexamination Certificate

active

06863725

ABSTRACT:
In one aspect, a substrate is positioned within a deposition chamber. Gaseous precursors comprising TaF5and at least one of H2O and O3are fed to the deposition chamber under conditions effective to deposit a Ta2O5comprising layer on the substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate within the chamber to form a first species monolayer from a gaseous first precursor comprising TaF5. The chemisorbed first species is contacted with a gaseous second precursor comprising at least one of H2O and O3to react with the first species to form a monolayer comprising Ta and O. The chemisorbing and contacting are successively repeated under conditions effective to form a mass of material on the substrate comprising Ta2O5.

REFERENCES:
patent: 5372974 (1994-12-01), Doan et al.
patent: 5691235 (1997-11-01), Meikle et al.
patent: 6149828 (2000-11-01), Vaartstra
patent: 6159818 (2000-12-01), Durcan et al.
patent: 6249040 (2001-06-01), Lin et al.
patent: 6280793 (2001-08-01), Atwell et al.
patent: 6281091 (2001-08-01), Durcan et al.
patent: 6291289 (2001-09-01), Rhodes et al.
patent: 6319832 (2001-11-01), Uhlenbrock et al.
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6329263 (2001-12-01), Durcan et al.
patent: 6333240 (2001-12-01), Durcan et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6388284 (2002-05-01), Rhodes et al.
patent: 6391735 (2002-05-01), Durcan et al.
patent: 6395600 (2002-05-01), Durcan et al.
patent: 6429086 (2002-08-01), Meikle et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6472323 (2002-10-01), Meikle et al.
patent: 6495459 (2002-12-01), Uhlenbrock et al.
patent: 6528834 (2003-03-01), Durcan et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6608342 (2003-08-01), Durcan et al.
patent: 6613702 (2003-09-01), Sandhu et al.
patent: 6620680 (2003-09-01), Duncan et al.
patent: 6656839 (2003-12-01), Uhlenbrock et al.
patent: 6661051 (2003-12-01), Durcan et al.
patent: 6664159 (2003-12-01), Vaartstra et al.
patent: 6666986 (2003-12-01), Vaartstra
patent: 6683005 (2004-01-01), Sandhu et al.
patent: 6690044 (2004-02-01), Doan et al.
patent: 6693319 (2004-02-01), Durcan et al.
patent: 6720272 (2004-04-01), Sandhu et al.
patent: 6730954 (2004-05-01), Meikle et al.
patent: 6753565 (2004-06-01), Durcan et al.
patent: 6764956 (2004-07-01), Sandhu et al.
patent: 6773495 (2004-08-01), Uhlenbrock et al.
patent: 6784049 (2004-08-01), Vaartstra
patent: 20010020448 (2001-09-01), Vaartstra et al.
patent: 20010024387 (2001-09-01), Raaijmakers et al.
patent: 20010036752 (2001-11-01), DeBoer et al.
patent: 20020045322 (2002-04-01), Meikle et al.
patent: 20020094634 (2002-07-01), Chung et al.
patent: 20020098654 (2002-07-01), Durcan et al.
patent: 20020125508 (2002-09-01), Durcan et al.
patent: 20020187654 (2002-12-01), DeBoer et al.
patent: 20040043633 (2004-03-01), Vaartstra
patent: 20040043636 (2004-03-01), Vaartstra et al.
patent: 1205574 (2002-05-01), None
U.S. Appl. No. 10/133,947, filed Apr. 25, 2002, Vaartstra (as filed).
U.S. Appl. No. 10/229,653, filed Aug. 28, 2002, Vaartstra(as filed).
Chaneliere et al.,Dielectric Permittivity of Amorphous and Hexagonal Electron Cyclotron Resonance Plasma . . ., 2 Electrochem. and Solid-State Ltrs., No. 6, pp. 291-293 (1999).
Kishiro et al.,Structure and Electrical Properties of Thin Ta2O5Deposited on Metal Electrodes, 37 Jpn. J. Appl. Phys. pp. 1336-1339 (1998).
Lin et al.,Ta2O5thin films exceptionally high dielectric constant, 74 Appl. Phys. Ltrs., No. 16, pp. 2370-2372 (Apr. 19, 1999).
Luo et al.,Effects of Deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide . . ., 17 J. Vac. Sci. Technol., No. 6, pp. 3235-3239 (Nov./Dec. 1999).
Devine et al.,Use of carbon-free Ta2O5thin-films as a gate-insulator, 36 Microelectronic Engineering 61-64 (1997).
Four et al.,Properties of tantalum pentoxide(Ta2O5)obtained by plasma assisted deposition using a TaF5Source, 254 Journal of Non-Crystalline Solids 139-145 (1999).

Affiliated with

Also associated with

Rating

Method of forming a Ta2O5 comprising layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a Ta2O5 comprising layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a Ta2O5 comprising layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3409937