Method of forming a superconducting oxide layer by MOCVD

Details Method of forming a superconducting oxide layer by MOCVD Method of forming a superconducting oxide layer by MOCVD

1992-07-22

1994-01-18

King, Roy

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505734, 505730, 427 62, 4272553, 4272552, 4272551, 4271263, C23C 1600, B05D 512

Patent

active

052800121

ABSTRACT:
This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.

REFERENCES:
patent: 3549412 (1970-12-01), Frey, Jr. et al.
patent: 3894164 (1975-07-01), Dismukes et al.
patent: 3978272 (1976-08-01), Donley
patent: 4148940 (1979-04-01), Breininger et al.
patent: 4501602 (1985-02-01), Miller et al.
patent: 4732110 (1988-03-01), Parsons
patent: 4735852 (1988-04-01), Osada
patent: 4804649 (1989-02-01), Sherif
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 4845308 (1989-07-01), Womack, Jr.
patent: 4869598 (1989-09-01), McDonald
patent: 4870052 (1989-09-01), Engler et al.
patent: 4880770 (1989-11-01), Mir et al.
patent: 4882312 (1989-11-01), Mogro-Campero
patent: 4908346 (1990-03-01), Strom et al.
patent: 4908348 (1990-03-01), Hung et al.
patent: 4915988 (1990-04-01), Erbil
patent: 4916115 (1990-04-01), Mantese et al.
patent: 4918051 (1990-04-01), Mantese et al.
patent: 4931425 (1990-06-01), Kimura et al.
patent: 4933317 (1990-06-01), Johnston, Jr. et al.
patent: 4935385 (1990-06-01), Biegelsen
patent: 4935626 (1990-06-01), Schneider
patent: 4937225 (1990-06-01), Kalonji et al.
patent: 4940693 (1990-07-01), Shappirio et al.
patent: 4943558 (1990-07-01), Soltis et al.
patent: 4943559 (1990-07-01), Severin et al.
Zhang et al., "Metalorganic chemical vapor deposition of Tl.sub.2 CaBa.sub.2 Cu.sub.2 O.sub.y superconducting thin films on sapphire," Appl. Phys. lett. 55(12) Sep. 18, 1989 pp. 1258-1260.
Shinohara et al., "Preparation of Y--Ba--Cu--O Superconducting Thin Films by Chemical Vapor deposition", Jpn. J. Appl. Phys. 27(9) Sep. 1988 L1683-1685.
Panson et al., "Chemical vapor deposition of YBa.sub.2 Cu.sub.3 O.sub.7 using metal-organic chelate precursors", Appl. Phys. lett. 53(18) Oct. 1988 pp. 1756-1758.
Asano et al., "High--Tc Y--Ba--Cu--O Thin Films Prepared by Dual Magnetron Sputtering", Jpn. J. Appl. Phys. 26(7) Jul. 1987 L1221-1222.
Oda et al., "Epitaxial Growth of YBaCuO Films on Sapphire at 500.degree. C. by Metalorganic Chemical Vapor deposition" Jpn. J. Appl. Phys. 28(3) Mar. 1989 L427-429.
Akoh et al., "Thickness dependence of superconductivity in rf-sputtered Y--Ba--Cu-O Thin Films", Appl. Phys. lett. 52(20) May 1988 pp. 1732-1734.
Abe et al., "Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x Film Formation by an OM-CVD method" Jpn. J. Appl. Phys. 27(8) Aug. 1988 L1473-1475.
Shah et al., "Annealing studies of Y Ba.sub.2 Cu.sub.3 O.sub.7-x thin films" Appl. Phys. lett. 53(7) Aug. 1988 pp. 612-614.
"Epitaxial Film Growths of Artificial (Bi-O)/(Sr-Ca--Cu--O) Layered Structures" Fujita, J., et al, Appl. Phys. Lett., vol. 54, No. 23, Jun., 1989, pp. 2364-2366.
"High T.sub.c Oxide Superconductors," Maple, M. B., Ed., MRS Bulletin, Jan. 1989, pp. 20-21.
"Effect of Noble Metal Buffer Layers on Superconducing YBa.sub.2 Cu.sub.3 O.sub.7 Thin Films," Appl. Phys. Lett., 1987, vol. 51, pp. 2155-2157.
"Reduced Pressure MOCVD of C-Axis Oriented BiSrCaCuO Thin Films" Hamaguchi, N. Japanese Journal of Applied Physics, vol. 29, No. 4, Apr. 1990 L596-L599.
"A Study of BIS(Hexafluoroacetylacetonato) Copper (II)," Betrand, J. A., et al Inorganic Chemistry, vol. 5, No. 3, Mar., 1966, pp. 489-491.
"Volatile Alkaline Earth Chelates of Fluorinated Alkanoylpivalylmethanes," Belcher, R., et al. Analytica Chem. Acta, 60 (1972) pp. 109-116.
"In-Situ Formation of Superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films Using Pure Ozone Vapor Oxidation," Berkley, D. D., et al, Appl. Phys. Lett. vol. 53, No. 20 Nov. 1988, pp. 1973 and 1975.
"In-Situ Processing of Epitaxial Y-Ba-Cu-O High T.sub.c Superconducting Films on (100) SrTiO.sub.3 and (100) YS-ZrO.sub.2 Substrates at 500.degree.-650.degree. C." Singh, R. K., et al. Appl. Phys. Lett. vol. 54, No. 22, May 1989, pp. 2271-2273.
"As-Grown Superconducting Bi-Sr-Ca-Cu-O Thin Films by Coevaporation" Yoshitake, T, et al. Appl. Phys. Lett. vol. 55, No. 7, Aug. 1989, pp. 702-704.
"High T.sub.c Oxide Superconductors" Maple, M. B., Ed, MRS Bulletin/Jan. 1989, pp 20-21.
"Microstructure and Properties of Superconducting Sputter Deposited Y--Ba--Cu--O Films" Kwasnick, R. F., et al, J. Mater. Res. vol. 4, No. 2, 1989, pp. 257-266.
"A Review of Metal Organic Chemical Vapor Deposition of High-Temperature Superconducting Thin Films" Erbil, A., et al., SPIE vol. 1187 1989, pp. 104-109.
"Growth of High T.sub.c YBaCuO Thin Films by Metalorganic Chemical Vapor Deposition" P. S. Kirlin, et al., SPIE vol. 1187 1989 pp. 115 to 127.
"High T.sub.c Bismuth and Thallium Copper Oxide Superconductors" Sleight, A. W., et al. MRS Bulletin/ Jan. 1989, pp. 45-48.
"Effect of the Post-Deposition Processing Ambient on the Preparation of Superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x Coevaporated Thin Films Using a BaF.sub.2 Source"Chan, S-W, et al., Appl. Phys. Lett., vol. 53, No. 15, Oct. 1988, pp. 1443-1445.
"MOCVD in Inverted Stagnation Point Flow", Journal of Crystal Growth, 77, 1986 pp. 120-127 (North-Holland).
"CVD in Stagnation Point Flow" Houtman, C., et al. Journal of the Electro Chem. Soc. May, 1986, pp. 961-970.

Affiliated with

Also associated with

Rating

Method of forming a superconducting oxide layer by MOCVD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a superconducting oxide layer by MOCVD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a superconducting oxide layer by MOCVD will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1136416