Method of forming a super-junction semiconductor device

Details Method of forming a super-junction semiconductor device Method of forming a super-junction semiconductor device

2006-01-03

2006-01-03

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S420000, C438S561000

Reexamination Certificate

active

06982193

ABSTRACT:
In one embodiment, a transistor is formed to have alternating depletion and conduction regions that are formed by doping the depletion and conduction regions through an opening in a substrate of the transistor.

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