Method of forming a stacked semiconductor package

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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Details

C438S109000, C438S666000

Reexamination Certificate

active

07485490

ABSTRACT:
Disclosed is a stacking structure of semiconductor chips and semiconductor package using it, capable of achieving an electric insulation even if a conductive wire makes contact with a lower surface of an upper semiconductor chip, while reducing a total thickness thereof and preventing damage. The stacking structure has a substrate formed with a plurality of circuit patterns; a first semiconductor chip bonded to an upper surface of the substrate and having a first plane and a second plane formed with a plurality of input/output pads; a spacer bonded to the second plane of the first semiconductor chip; a second semiconductor chip having first and second planes, the second plane being formed with a plurality of input/output pads, the first plane being provided with an insulating member so as to allow the second semiconductor chip to be bonded to the spacer, a first conductive wire for connecting the input/output pads of the first semiconductor chip to the circuit patterns of the substrate; and a second conductive wire for connecting the input/output pads of the second semiconductor chip to the circuit patterns of the substrate.

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