Method of forming a stacked semiconductor device wherein semicon

Details Method of forming a stacked semiconductor device wherein semicon Method of forming a stacked semiconductor device wherein semicon

1992-09-04

1995-02-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437189, 437193, 437195, 148DIG10, H01L 21265

Patent

active

053915038

ABSTRACT:
According to this invention, a base extracting electrode is formed using a polysilicon side wall self-aligned with a base region so as to reduce a collector-base parasitic capacitance of a transistor. A base layer is formed on a semiconductor substrate by a selective epitaxial method using an MBE method to obtain a high-speed operation. A high impurity-concentration region is formed on a buried layer immediately below an emitter by pedestal ion implantation to reduce a collector series resistance. In addition, a specific layer of a plurality of polysilicon layers is selectively annealed by radiation of an eximer laser to operate the transistor at high speed and to obtain a highly accurate resistor element.

REFERENCES:
patent: 4319932 (1982-03-01), Jambotkar
patent: 4543707 (1985-01-01), Ito et al.
patent: 4800171 (1989-01-01), Irammanesh et al.
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4857476 (1989-08-01), Colinge
patent: 4952521 (1990-08-01), Goto
patent: 4967253 (1990-10-01), Jambotkar
patent: 4980305 (1990-12-01), Kadota et al.
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 4996581 (1991-02-01), Hamasaki
patent: 5010039 (1991-04-01), Ku et al.
patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5234844 (1993-08-01), Okita
patent: 5234846 (1993-08-01), Chu et al.
patent: 5266504 (1993-11-01), Blouse et al.

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