Method of forming a stacked device filler

Details Method of forming a stacked device filler Method of forming a stacked device filler

2006-01-10

2006-01-10

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S620000, C438S107000, C438S109000, C438S612000, C438S762000, C438S765000

Reexamination Certificate

active

06984873

ABSTRACT:
Numerous embodiments of a stacked device filler and a method of formation are disclosed. In one embodiment, a method of forming a stacked device filler comprises forming a material layer between two or more substrates of a stacked device, and causing a reaction in at least a portion of the material, wherein the reaction may comprise polymerization, and the material layer may be one or a combination of materials, such as nonconductive polymer materials, for example.

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