Method of forming a stack capacitor of fin structure for DRAM ce

Details Method of forming a stack capacitor of fin structure for DRAM ce Method of forming a stack capacitor of fin structure for DRAM ce

1996-01-04

1996-10-22

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055676391

ABSTRACT:
The polysilicon bottom electrode of a stacked fin structure storage capacitor for a DRAM cell is self-aligned with the buried contact to the diffusion of a MOSFET. A silicon nitride layer and a sacrificial oxide (sac) umbrella overhangs the buried contact. Using the sac oxide as a mask, the silicon nitride layer is undercut until a part of the polysilicon buried contact is exposed. Then another polysilicon layer is deposited to contact the buried contact and to form the bottom electrode of the capacitor. Thus the bottom electrode and the buried contact are self-aligned. Again, using the sac oxide as a mask, the bottom electrode is etched laterally to form fin-shape electrode. Then, the bottom electrode is deposited with a capacitor dielectric and a top electrode to form the storage capacitor.

REFERENCES:
patent: 5053351 (1991-10-01), Fazan
patent: 5185282 (1993-02-01), Lee et al.
patent: 5422295 (1995-06-01), Choi et al.

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