Method of forming a sputtering target

Details Method of forming a sputtering target Method of forming a sputtering target

2011-03-28

2011-12-13

Dang, Phuc (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S084000, C438S102000, C257S184000, C257SE21090

Reexamination Certificate

active

08076174

ABSTRACT:
A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

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