Method of forming a single crystal semiconductor layer from a no

Details Method of forming a single crystal semiconductor layer from a no Method of forming a single crystal semiconductor layer from a no

1985-08-05

1987-05-05

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148DIG93, 156612, 156620, 427 531, H01L 21263, H01L 21208

Patent

active

046629491

ABSTRACT:
In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.

REFERENCES:
patent: 4315130 (1982-02-01), Inagaki et al.
patent: 4406709 (1983-09-01), Celler et al.
patent: 4473433 (1984-09-01), Bosch et al.
patent: 4564403 (1986-01-01), Hayafuji et al.
Zorabedian et al. in Mat. Res. Soc. Proc., vol. 13, ed. Narayan et al., N. Holland, N.Y., 1982, p. 523.
Stultz et al., Appl. Phys. Letts.

Affiliated with

Also associated with

Rating

Method of forming a single crystal semiconductor layer from a no does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a single crystal semiconductor layer from a no, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a single crystal semiconductor layer from a no will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2397303