Method of forming a single crystal semiconductor layer from a no

Details Method of forming a single crystal semiconductor layer from a no Method of forming a single crystal semiconductor layer from a no

1986-09-08

1988-05-24

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250396R, 250398, H01J 328, H01L 2126

Patent

active

047468033

ABSTRACT:
In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.

REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 4187126 (1980-02-01), Radd et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4421998 (1983-12-01), Robertson et al.

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